《厦门大学学报（自然科学版）》

以等离子体增强原子层沉积(PE-ALD)技术生长氮氧化铝(AlNxOy)薄膜,磁控溅射Ag上电极制备结构为Ag/AlNxOy/Pt的阻变存储器(RRAM).器件呈现双极性阻变特性,正向开启电压稳定且分布窄,变化幅度集中在0.5 V的范围内.高阻态和低阻态电阻之比超过103,并具有免激活特性.低温测试表明,器件的低阻态电阻和温度正相关,说明了阻变的机制为银导电细丝的形成和断裂.

AlNxOy film deposited by plasma-enhanced atomic layer deposition(PE-ALD)and Ag electrode sputtered by magnetron sputtering are used to fabricate resistive random access memory(RRAM)devices with a structure of Ag/AlNxOy/Pt.The device can be resistively switched in the bipolar mode with the set voltages distributed in a narrow range of 0.5 V.The high/low resistance ratio lies beyond 103.The device is also found to be electroforming-free.Low-temperature I-U measurement show that the resistance of the ohmic low resistance state is positively proportional to the temperature,suggesting the metallic filament property.The switching mechanism of the device is explained by the formation and therupture of the Ag filaments in AlNxOy films.

引言
1 实验部分
2 结果与分析
3 结论

表1 AlNxOy薄膜生长工艺参数<br/>Tab.1 AlNxOy thin film process parameter

表1 AlNxOy薄膜生长工艺参数
Tab.1 AlNxOy thin film process parameter

图1 Pt/Ti/Si衬底上Ag/AlNxOy/Pt RRAM结构示意图<br/>Fig.1 Schematic configuration of the Ag/AlNxOy/Pt RRAM device

图1 Pt/Ti/Si衬底上Ag/AlNxOy/Pt RRAM结构示意图
Fig.1 Schematic configuration of the Ag/AlNxOy/Pt RRAM device

图2 AlNxOy薄膜的AFM表面形貌(a)与AES组分深度分析(b)<br/>Fig.2 AFM image(a)and AES depth profiles(b)of the AlNxOy films

图2 AlNxOy薄膜的AFM表面形貌(a)与AES组分深度分析(b)
Fig.2 AFM image(a)and AES depth profiles(b)of the AlNxOy films

图3 Ag/AlNxOy/Pt器件100次阻变循环的电学性能<br/>Fig.3 Electric properties of the Ag/AlNxOy/Pt RRAM device under 100 successive DC sweeping cycles

图3 Ag/AlNxOy/Pt器件100次阻变循环的电学性能
Fig.3 Electric properties of the Ag/AlNxOy/Pt RRAM device under 100 successive DC sweeping cycles

图4 在低阻态Ag/AlNxOy/Pt和Ag/AlNxOy:Ag/Pt RRAM的电学性能<br/>Fig.4 Electric properties of Ag/AlNxOy/Pt and Ag/AlNxOy:Ag/Pt RRAM with low resistance station

图4 在低阻态Ag/AlNxOy/Pt和Ag/AlNxOy:Ag/Pt RRAM的电学性能
Fig.4 Electric properties of Ag/AlNxOy/Pt and Ag/AlNxOy:Ag/Pt RRAM with low resistance station

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备注

引言

1 实验部分

2 结果与分析

3 结论

学报简介

备注

引言

1 实验部分

2 结果与分析

3 结 论

学报简介

3 结论