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[1]李永伟,唐学原*.反应烧结法制备BN/Si3N4复相陶瓷的结构和性能[J].厦门大学学报(自然科学版),2018,57(03):317-322.[doi:10.6043/j.issn.0438-0479.201706023]
 LI Yongwei,TANG Xueyuan*.Structure and Properties of BN/Si3N4 Composite Ceramics Prepared with Reaction Sintering[J].Journal of Xiamen University(Natural Science),2018,57(03):317-322.[doi:10.6043/j.issn.0438-0479.201706023]
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《厦门大学学报(自然科学版)》[ISSN:0438-0479/CN:35-1070/N]

卷:
57卷
期数:
2018年03期
页码:
317-322
栏目:
研究论文
出版日期:
2018-05-31

文章信息/Info

Title:
Structure and Properties of BN/Si3N4 Composite Ceramics Prepared with Reaction Sintering
文章编号:
0438-0479(2018)03-0317-06
作者:
李永伟1唐学原12*
1.厦门大学 材料学院,福建省特种先进材料重点实验室,2.高性能陶瓷纤维教育部重点实验室(厦门大学),福建 厦门 361005
Author(s):
LI Yongwei1TANG Xueyuan12*
1.Fujian Key Laboratory of Advanced Materials,College of Materials,Xiamen University,2.Key Laboratory of High Performance Ceramic Fibers,Ministry of Education,Xiamen University,Xiamen 361005,China
关键词:
反应烧结 BN/Si3N4复相陶瓷 氮化率 介电性能
Keywords:
reaction sintering BN/Si3N4 composite ceramics nitriding degree dielectric properties
分类号:
TB 321
DOI:
10.6043/j.issn.0438-0479.201706023
文献标志码:
A
摘要:
采用在硅(Si)粉中添加硼(B)粉,利用反应烧结法制备氮化硼/氮化硅(BN/Si3N4)复相陶瓷,分别采用X射线衍射、傅里叶变换红外光谱、扫描电子显微镜对其相组成和断面形貌进行表征,并采用同轴法分析其介电性能.结果表明:成型压强的增加会导致样品氮化率下降; 随着氮化温度的升高,样品氮化率增大; 随着B添加量的增加,样品的氮化率先升高后降低.采用12 MPa成型且B添加量为10%(质量分数)时,经1 450 ℃氮化处理制得的陶瓷以β-Si3N4相为主,孔隙率为40.12%,在2~18 GHz频率下,其介电常数为3.27~3.58,介电损耗角正切值为1.10×10-3~1.12×10-2.B的加入有效地改善了Si3N4陶瓷的介电性能,有望应用于透波材料领域.
Abstract:
BN/Si3N4 composite ceramics were fabricated with reaction sintering method using silicon powder and boron powder as raw materials.Phases were analyzed using the X-ray diffraction(XRD).Chemical structures were identified using Fourier transform infrared(FT-IR)spectrometer.Microstructural formations were characterized using scanning electron microscopy(SEM),and dielectric properties were measured at room temperature with coaxial method.The experimental results showed that the nitridation degrees of the specimens were hindered by increasing forming pressure,but obviously increased as the heating temperature rose.The nitridation degrees of the specimens firstly increased and then decreased with the amounts of boron increasing.Composite ceramic with 10% boron addition under 12 MPa cold forming pressure,which was nitrided at 1 450 ℃ exhibited high phase forming of β-Si3N4,with porosity of 40.12%.At the frequency ranging from 2 GHz to 18 GHz,the dielectric constant and the dielectric loss tangent were 3.27 to 3.58 and 1.10×10-3 to 1.12×10-2,respectively.The dielectric properties of ceramics were improved due to the boron addition,which could be used as a kind of transparent material in microwaves.

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备注/Memo

备注/Memo:
收稿日期:2017-06-21 录用日期:2017-09-06
基金项目:国家自然科学基金(51302235)
*通信作者:xytang@xmu.edu.cn
引文格式:李永伟,唐学原.反应烧结法制备BN/Si3N4复相陶瓷的结构和性能[J].厦门大学学报(自然科学版),2018,57(3):317-322.
Citation:LI Y W,TANG X Y.Structure and properties of BN/Si3N4 composite ceramics prepared with reaction sintering[J].J Xiamen Univ Nat Sci,2018,57(3):317-322.(in Chinese)
更新日期/Last Update: 1900-01-01