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[1]雷俐莎,林晓辉,周志东*.开路和短路电学边界外延铁电薄膜的畴结构及铁电性能[J].厦门大学学报(自然科学版),2018,57(01):1-8.[doi:doi:10.6043/j.issn.0438-0479.201703036]
 LEI Lisha,LIN Xiaohui,ZHOU Zhidong*.Domain Structures and Ferroelectric Property Under Open and Short Circuit Electrical Boundary in Epitaxial Ferroelectric Thin Films[J].Journal of Xiamen University(Natural Science),2018,57(01):1-8.[doi:doi:10.6043/j.issn.0438-0479.201703036]
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开路和短路电学边界外延铁电薄膜的畴结构及铁电性能(PDF/HTML)
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《厦门大学学报(自然科学版)》[ISSN:0438-0479/CN:35-1070/N]

卷:
57卷
期数:
2018年01期
页码:
1-8
栏目:
研究论文
出版日期:
2018-01-26

文章信息/Info

Title:
Domain Structures and Ferroelectric Property Under Open and Short Circuit Electrical Boundary in Epitaxial Ferroelectric Thin Films
文章编号:
0438-0479(2018)01-0001-08
作者:
雷俐莎林晓辉周志东*
厦门大学 材料学院,福建省特种先进材料重点实验室,福建 厦门 361005
Author(s):
LEI LishaLIN XiaohuiZHOU Zhidong*
Fujian Key Laboratory of Advanced Materials,College of Materials,Xiamen University,Xiamen 361005,China
关键词:
应力函数 开路电学边界 短路电学边界 相场法 铁电畴结构
Keywords:
stress function open circuit electrical boundary short circuit electrical boundary phase field method ferroelectric domain structures
分类号:
O 484.1
DOI:
doi:10.6043/j.issn.0438-0479.201703036
文献标志码:
A
摘要:
考虑基体对外延铁电薄膜内畴变的约束,采用应力函数方法求解外延铁电薄膜畴变时的本征应力,并结合相场法分析了不同电学边界条件下铁电薄膜的畴结构与极化强度.对短路电学边界下PbTiO3外延铁电薄膜畴结构的计算表明,由a畴到a/c/a畴转变时的薄膜厚度与采用有限元方法模拟的结果十分接近.通过对开路电学边界下铁电薄膜畴结构的分析发现,a畴到a/c/a畴转变时的薄膜厚度远大于短路条件下的转变厚度.基体约束引起的应力变化使得薄膜内畴结构出现a畴和a/c/a畴的分层.铁电薄膜的平均自发极化强度随厚度的增加而增加,a畴向多畴转变后,极化强度有显著的增加.
Abstract:
Considering constraints on the domain switching of epitaxial ferroelectric thin films with the substrate,we use the stress function method to calculate the eigenstress of epitaxial ferroelectric thin films.Further,according to the phase field method,the domain structures and polarization intensity of PbTiO3 epitaxial ferroelectric thin films under different electrical conditions are analyzed.The present results with the short circuit electrical boundary show that the critical thickness,in which a domain switches to a/c/a domain in epitaxial ferroelectric thin films,is very close to that using the finite element method under the same condition.The numerical results with the open circuit electrical boundary show that the critical thickness of a domain switching to a/c/a domain is much greater than that with the short circuit electrical boundary.The substrate,which affects the eigenstress in thin films,leads to two layers of a domain and a/c/a domain in thin films.With the increase in thickness,the polarization intensity increases.When domain structures switch from a domain to a/c/a domain,the polarization intensity has an obvious increase.Considering constraints on the domain switching of epitaxial ferroelectric thin films with the substrate,we use the stress function method to calculate the eigenstress of epitaxial ferroelectric thin films.Further,according to the phase field method,the domain structures and polarization intensity of PbTiO3 epitaxial ferroelectric thin films under different electrical conditions are analyzed.The present results with the short circuit electrical boundary show that the critical thickness,in which a domain switches to a/c/a domain in epitaxial ferroelectric thin films,is very close to that using the finite element method under the same condition.The numerical results with the open circuit electrical boundary show that the critical thickness of a domain switching to a/c/a domain is much greater than that with the short circuit electrical boundary.The substrate,which affects the eigenstress in thin films,leads to two layers of a domain and a/c/a domain in thin films.With the increase in thickness,the polarization intensity increases.When domain structures switch from a domain to a/c/a domain,the polarization intensity has an obvious increase.

参考文献/References:

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[29] ZHOU Z D,LEI L S,SU Y X.The effect of the surface electrode distributions on domain structures of ferro-electric thin films[J].AIP Advances,2017,7(6):065019.
[30] PETRARU A,PERTSEV N A,KOHLSTEDT H,et al.Polarization and lattice strains in epitaxial films grown by high-pressure sputtering[J].Journal of Applied Phy-sics,2007,101:114106.
[31] ZHOU Z D,ZHANG C Z,JIANG Q.Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films[J].Chinese Physics B,2011,20:107701.
[32] KIM D M,EOM C B,NAGARAJAN V,et al.Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates[J].Applied Physics Letters,2006,88(14):142904.
[33] PALOVA L,CHANDRA P,RABE K M.Modeling the dependence of properties of ferroelectric thin film on thickness[J].Physical Review B,2007,76(1):014112.[1] SCOTT J F.Device physics of ferroelectric memories[J].Ferroelectrics,1996,183(1):51-63.
[2] LAI B K,PONOMAREVA I,NAUMOV I I,et al.Electric-field-induced domain evolution in ferroelectric ultrathin films[J].Physical Review Letters,2006,96(13):137602.
[3] NELSON C T,GAO P,JOKISAARI J R,et al.Domain dynamics during ferroelectric switching[J].Science,2011,334(6058):968-971.
[4] SANDO D,BARTHELEMY A,BIBES M.BiFeO3 epitaxial thin films and devices:past,present and future[J].Journal of Physics:Condensed Matter,2014,26(47):473201.
[5] CAO G P,CAO Y,HUANG H B,et al.Analysis of multi-domain ferroelectric switching in BiFeO3 thin film using phase-field method[J].Computational Materials Science,2016,115:208-213.
[6] PERTSEV N A,ZEMBILGOTOV A G,TAGANTSEV A K.Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films[J].Physical Review Letters,1998,80(9):1988-1991.
[7] QIAO H,WANG J,CHEN W Q.Phase field simulation of domain switching in ferroelectric single crystal with electrically permeable and impermeable cracks[J].Acta Mechanica Solida Sinica,2012,25(1):1-8.
[8] WANG J,LI Y L,CHEN L Q,et al.The effect of mechanical strains on the ferroelectric and dielectric properties of a model single crystal-phase field simulation[J].Acta Materialia,2005,53(8):2495-2507.
[9] PERANTIE J,STRATULAT M S,HANNU J,et al.Enhancing polarization by electrode-controlled strain relaxation in PbTiO3 heterostructures[J].APL Materials,2016,4(1):016104.
[10] WANG J,ZHANG T Y.Size effects in epitaxial ferro-electric islands and thin film[J].Physical Review B,2006,73(14):144107.
[11] LI Y L,HU S Y,LIU Z K,et al.Effect of electrical boundary conditions on ferroelectric domain structures in thin films[J].Applied Physics Letters,2002,81(3):427-429.
[12] HONG L,SOH A K,SONG Y C,et al.Interface and surface effects on ferroelectric nano-thin film[J].Acta Materialia,2008,56(13):2966-2974.
[13] MA D C,ZHENG Y,WOO C H.Phase-field simulation of domain structure for PbTiO3/SrTiO3 superlattices[J].Acta Materialia,2009,57(16):4736-4744.
[14] JUNQUERA J,GHOSEZ P.Critical thickness for ferroelectricity in perovskite ultrathin films[J].Nature,2003,422(6931):506-509.
[15] XIA Y X,WANG J.Switching behavior of ferroelectric thin films with deadlayers[J].Smart Material and Structures,2012,21(9):18-21.
[16] ZHOU Z D,WU D Y.Domain structures of ferroelectric films under different electrical boundary conditions[J].AIP Advances,2015,5(10):107206.
[17] TANG Y L,ZHU Y L,MA X L,et al.Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO3 films[J].Science,2015,348(6234):547-551.
[18] YADAV A K,NELSON C T,HSU S L,et al.Observation of polar vortices in oxide superlattices[J].Nature,2016,530(7589):198-201.
[19] ZHOU Y G,PENG J L,PAN K,et al.An unconventional phase field modeling of domains formation and evolution in tetragonal ferroelectrics[J].Science China Technological Sciences,2016,59(7):1059-1064.
[20] QIU Q Y,MAHJOUB R,ALPAY S P,et al.Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films[J].Acta Materialia,2010,58(3):823-835.
[21] HAUN M J,FURMAN E,JANG S J,et al.Thermo-dynamic theory of PbTiO3[J].Journal of Applied Physics,1987,62(8):3331-3338.
[22] CHEN W J,ZHENG Y,WANG B,et al.Coexistence of toroidal and polar domains in ferroelectric systems:strategy for switching ferroelectric vortex[J].Journal of Applied Physics,2014,115(21):214106.
[23] LI Y L,HU S Y,LIU Z K,et al.Effect of electrical boundary conditions on ferroelectric domain structures in thin films[J].Applied Physics Letters,2002,81(3):427-429.
[24] XUE F,WANG J J,SHENG G,et al.Phase field simulations of ferroelectrics domain structures in PbZrxTi1-xO3 bilayers[J].Acta Materialia,2013,61(8):2909-2918.
[25] WANG J,SHI S Q,CHEN L Q,et al.Phase-field simulations of ferroelectric/ferroelastic polarization switching[J].Acta Materialia,2004,52(3):749-764.
[26] 刘土光,张涛.弹塑性力学基础理论[M].武汉:华中科技大学出版社,2008:119.
[27] VENDIK O G,ZUBKO S P.Ferroelectric phase transition and maximum dielectric permittivity of displacement type ferroelectrics(BaxSr1-xTiO3)[J].Journal of Applied Physics,2000,88(9):5343-5350.
[28] CHEN Z Y,SU Y X,ZHOU Z D,et al.The influence of the electrical boundary condition on domain structures and electrocaloric effect of PbTiO3 nanostructures[J].AIP Advances,2016,6(5):055207.
[29] ZHOU Z D,LEI L S,SU Y X.The effect of the surface electrode distributions on domain structures of ferro-electric thin films[J].AIP Advances,2017,7(6):065019.
[30] PETRARU A,PERTSEV N A,KOHLSTEDT H,et al.Polarization and lattice strains in epitaxial films grown by high-pressure sputtering[J].Journal of Applied Phy-sics,2007,101:114106.
[31] ZHOU Z D,ZHANG C Z,JIANG Q.Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films[J].Chinese Physics B,2011,20:107701.
[32] KIM D M,EOM C B,NAGARAJAN V,et al.Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates[J].Applied Physics Letters,2006,88(14):142904.
[33] PALOVA L,CHANDRA P,RABE K M.Modeling the dependence of properties of ferroelectric thin film on thickness[J].Physical Review B,2007,76(1):014112.

备注/Memo

备注/Memo:
收稿日期:2017-03-21 录用日期:2017-05-24
基金项目:国家自然科学基金(11572271)
*通信作者:zdzhou@xmu.edu.cn
更新日期/Last Update: 1900-01-01