|本期目录/Table of Contents|

[1]黄强灿,蔡端俊,康俊勇*.In极性面InN的生长动力学行为[J].厦门大学学报(自然科学版),2012,51(5):818.
 HUANG Qiang can,CAI Duan jun,KANG Jun yong*.The Dynamic and Kinetic Behavior of InN Growth on Inpolar Surface[J].Journal of Xiamen University(Natural Science),2012,51(5):818.
点击复制

In极性面InN的生长动力学行为(PDF)
分享到:

《厦门大学学报(自然科学版)》[ISSN:0438-0479/CN:35-1070/N]

卷:
51卷
期数:
2012年第5期
页码:
818
栏目:
研究论文
出版日期:
2012-09-20

文章信息/Info

Title:
The Dynamic and Kinetic Behavior of InN Growth on Inpolar Surface
作者:
黄强灿蔡端俊康俊勇*
厦门大学 物理与机电工程学院,福建省半导体材料及应用重点实验室,福建 厦门 361005
Author(s):
HUANG QiangcanCAI DuanjunKANG Junyong*
Key Laboratory Semiconductor Materials and Applications of Fujian Province, School of Physics and Mechanical & Electrical Engineering,Xiamen University,Xiamen 361005,China
关键词:
第一性原理动力学InN
Keywords:
firstprinciplekineticInN
分类号:
O 781;O 484.1
文献标志码:
-
摘要:
采用第一性原理模拟计算方法,从原子层面出发,了解InN的生长动力学行为.通过计算N和In原子于不同覆盖度下In极性表面的top、h3以及t4位置上的形成能和扩散势垒,了解沉积原子的相互作用和成核.结果表明,In原子比N原子更容易在干净的In极性表面吸附、粘接,并通过扩散找到稳定位置,形成一个较致密的双In原子层.模拟计算了N和In原子在双In原子层和三In原子层表面的扩散,结果显示,在稳定的双In原子层上,N原子将通过垂直扩散穿过顶部In原子层,并在两In原子层表面之间横向扩散,形成纤锌矿结构的InN材料;然而,In原子虽然可形成三In原子层或In滴,其上沉积的N原子也仅能垂直扩散穿过顶部In原子层,长成新的InN分子层,与InN基底间存在双In原子层或更厚的In薄膜,形成不完整的纤锌矿结构InN薄膜.在此基础上,我们提出一新的InN外延两步生长法,以在生长过程中尽量保持表面只存在双In原子层结构,为高质量InN薄膜的外延提供理论依据.
Abstract:
We try to understand the growth kinetic behavior of InN film at the the atomic level,using the first principles simulation method.By calculating the formation energies and barriers of N and In atoms at top,h3,and t4 site under different coverages,the interreaction and nucleation behaviors of the deposition atoms were known.The results showed that In atoms are more favourite to adsorb at a stable site on In polar surface by adhesion and diffusion,and form a compact In bilayer.Furthermore,the diffusion of N and In atoms were simulated on the In bilayer and trilayer.The results revealed that the N atoms will diffuse vertically into the top In layer of the stable In bilayer,and then form a wurtzite InN layer by lateral diffusion inside the In bilayer.Although an In trilayer or droplet can exist during the epitaxy,N atoms also can only penetrate into the top In layer,leading to a In bilayer or thick In film between deposited InN layer and the InN substrate,and an incomplete wurtzite InN film formed.On the basis of above results,we porpose a twostep growth method for InN epitaxy by keeping the In bilayer to achieve high quality InN film.

参考文献/References:


[1]Nakamura S,Masayuki S,Takashi M. PGaN/NInGaN/NGaN doubleheterostructure bluelightemitting diodes[J].Japanese Journal of Applied Physics,1993,32(1 A/B): L8L11.
[2]Nakamura S,Masayuki S,Iwasa N,et al.Superbright green InGaN singlequantumwellstructure lightemitting diodes[J].Japanese Journal of Applied Physics,1995,34(10 B): L1332L1335.
[3]Fujii T,Gao Y,Sharma R,et al.Increase in the extraction efficiency of GaNbased lightemitting diodes via surface roughening[J].Applied Physics Letters,2004,84(6): 855857.
[4]Nakamura S,Masayuki S,ShinIchi N,et al.Blue InGaNbased laser diodes with an emission wavelength of 450 nm[J].Applied Physics Letters,2000,76(1): 2224.
[5]Xu G Y,Salvador A,Kim W,et al.High speed,low noise ultraviolet photodetectors based on GaN pin and AlGaN(p)GaN(i)GaN(n) structures[J].Applied Physics Letters,1997,71(15): 21542154.
[6]Zolper J C.A review of junction field effect transistors for hightemperature and highpower electronics[J].Solid State Electronics,1998,42(12): 21532156.
[7]Wu J Q.When groupIII nitrides go infrared:new properties and perspectives[J].Journal of Applied Physics,2009,106(1): 011101.
[8]Ambacher O,Brandt M S,Dimitrov R,et al.Thermal stability and desorption of group III nitrides prepared by metal organic chemical vapor deposition[J].Journal of Vacuum Science and Technology B,1996,14(6): 35323532.
[9]Laboutin O A,Welser R E.Impact of GaN buffer layer on the growth and properties of InN islands[J].Applied Physics Letters,2008,92:223103.
[10]Blanco A A,Pandey R.Theoretical study of AlnNn,GanNn,and InnNn(n=4,5,6)clusters[J].Journal of Physical Chemistry B,2002,106:19451953.
[11]Wang H,Jiang D S,Zhu J J,et al.The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD[J].Semiconductor Science and Technology,2009,24(5): 055001.
[12]ChengHung S,Ikai L,Pang W Y,et al.Growth of InN thin films on ZnO substrate by plasmaassisted molecular beam epitaxy[J].Journal of Physics and Chemistry of Solids,2010,71(12): 16641668.
[13]Ng Y F,Cao Y G,Xie M H,et al.Growth mode and strain evolution during InN growth on GaN(0001) by molecularbeam epitaxy[J].Applied Physics Letters,2002,81(21): 39603962.
[14]戴宪起,王建利,闫慧娟.氮化铟(0001)干净和缺陷表面结构研究[J].河南师范大学学报:自然科学版,2008,36(2):5053.
[15]Schmidt H,Borchardt G,Rudolphi M,et al.Nitrogen selfdiffusion in silicon nitride thin films probed with isotope heterostructures[J].Applied Physics Letters,2004,85(4): 582584.
[16]王恩哥.薄膜生长中的表面动力学(I)[J].物理学进展,2003,23(1):2.
[17]Jamil M,Zhao H,Higgins J B,et al.Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap(0.77eV)InN grown on GaN/sapphire using pulsed MOVPE[J].Journal of Crystal Growth,2008,310:49474953.

备注/Memo

备注/Memo:
收稿日期:20120309 基金项目:国家重点基础研究发展计划(973)项目(2011CB925600,2012CB619301);国家自然科学基金项目(90921002,60827004,61076084) *通信作者:jykang@xmu.edu.cn
更新日期/Last Update: 2012-09-20