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[1]马中华*,欧阳军,柯友艺,等.一种新的RF预失真方案的设计与仿真[J].厦门大学学报(自然科学版),2012,51(2):179.
 MA Zhong hua*,OUYANG Jun,KE You yi,et al.Design and Simulation of a New RF Predistortion Circuit[J].Journal of Xiamen University(Natural Science),2012,51(2):179.
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一种新的RF预失真方案的设计与仿真(PDF)
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《厦门大学学报(自然科学版)》[ISSN:0438-0479/CN:35-1070/N]

卷:
51卷
期数:
2012年第2期
页码:
179
栏目:
研究论文
出版日期:
2012-03-15

文章信息/Info

Title:
Design and Simulation of a New RF Predistortion Circuit
作者:
马中华1*欧阳军2柯友艺1陈红霞1陈大灿1
1.集美大学信息工程学院,2.集美大学航海学院,福建 厦门 361021
Author(s):
MA Zhonghua1*OUYANG Jun2KE Youyi1CHEN Hongxia1CHEN Dacan1
1.School of Information Engineering,2.School of Navigation,Jimei University,Xiamen 361021,China
关键词:
峰均比预失真互调失真记忆效应
Keywords:
peaktoaverage power ratiopredistortionintermodulation distortionmemory effect
分类号:
TN 830.6
文献标志码:
-
摘要:
根据预失真原理,利用对消的方法,提出一种改进的预失真电路的方案,设计了分别产生三阶和五阶互调分量预失真器电路.最后以Polyfet公司的有记忆效应的功放管设计的功率放大电路为例,分析比较了未加预失真电路的功放性能和加了预失真电路的功放性能,测试结果表明失真分量有了很大的改善,三阶互调系数(IMD3)改善了20.5 dB,五阶互调系数(IMD5)改善了3.8 dB.IMD3比传统的方案提高了3.2 dB,IMD5比传统的方案提高了5.8 dB.
Abstract:
According to the predistortion theory and cancellation method,an improved program of predistortion circuit is put forward,which includes the thirdorder and the fifthorder intermodulationcomponent′s predistortion circuit.Finally,take the power amplifier device of Polyfet company′s memory effect as an example,analyzing and comparing the power′s performance between unpredistortion circuit and predistortion circuit,which tests the improvement level of distortion′s component.The thirdorder intermodulationsupression is improved 20.5 dB.Meanwhile,the fifthorder intermodulationsupression is improved 3.8 dB.The thirdorder intermodulationsupression is improved 3.2 dB than conventional scheme.the fifthorder intermodulationsupression is improved 5.8 dB than conventional scheme.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:20110315基金项目:国家自然科学基金项目(60803078);福建省教育厅科技项目(JB11096)*通信作者:mzhxm@jmu.edu.cn
更新日期/Last Update: 2012-03-15